1. Standard 4 or 8 cleaning chamber configuration, multi chamber high production capacity, both can independently set parameters

2. 8 and 12 inch wafers, compatible with the same equipment for operation

3. Can correspond to high curvature wafers, ± 5mm

4. Each cleaning chamber is equipped with an independent FFU for speed adjustment and differential pressure monitoring

5. The equipment occupies a small area and consumes less energy in the clean room, resulting in low CoO production costs

6. Space planning for water and gas piping for easy maintenance and upkeep

7. The process, formula, and various functional parameters of the cavity are collected and uploaded to meet the requirements of semiconductor SECS/GEM and EAP operations

8. Optional high-pressure needle nozzle, fan-shaped nozzle, two fluid (nitrogen atomized deionized water), deionized water nozzle, deionized water backwash, megasonic and nitrogen drying, etc., cleaning methods

9. Optional IPA cleaning solvent or deionized water heating to remove flux from Reflow process

10. Optional SEMI S2&S8, third-party certification