1. Standard 8-chamber developing chamber configuration, multi chamber high production capacity, all can independently set parameters

2. 8 and 12 inch wafers, compatible with the same equipment for operation

3. Can correspond to high curvature wafers, ± 5mm

4. Each imaging cavity is equipped with an independent FFU for speed adjustment and differential pressure monitoring

5. The equipment occupies a small area and consumes less energy in the clean room, resulting in low CoO production costs

6. The developing chamber has excellent airtightness and can suppress the leakage of acid/alkali gases

7. Accurate control of the flow rate of the developing solution

8. Waste liquid discharge: The developing chamber can switch between liquid medicine and water, and can separate the discharge of waste liquid

9. Space planning for water and gas piping for easy maintenance and upkeep

10. The process, formula, and various functional parameters of the cavity are collected and uploaded to meet the requirements of semiconductor SECS/GEM and EAP operations

11. Optional pairing should include positive and negative developer solutions, such as RMX3000, KS5400, etc

12. Optional dispensing nozzle, deionized water nozzle, deionized water backwash and nitrogen drying, etc., development process method

13. Optional SEMI S2&S8, third-party certification