1. Standard 4 or 8 etching chamber configuration, multi chamber high production capacity, both can independently set parameters

2. 8 and 12 inch wafers, compatible with the same equipment for operation

3. Can correspond to high curvature wafers, ± 5mm

4. Each etching chamber is equipped with an independent FFU for speed adjustment and differential pressure monitoring

5. The equipment occupies a small area and consumes less energy in the clean room, resulting in low CoO production costs

6. The etching chamber has excellent airtightness and can suppress the leakage of acid/alkali gases

7. Accurate control of etching solution flow rate

8. Waste liquid discharge: The etching chamber can switch between liquid medicine and water, and the waste liquid can be discharged separately

9. The recovery rate of etching solution is greater than 95%

10. Space planning for water and gas piping for easy maintenance and upkeep

11. The process, formula, and various functional parameters of the cavity are collected and uploaded to meet the requirements of semiconductor SECS/GEM and EAP operations

12. Optional pairing with etching solution, such as Cu, Ti, TiW, Au, AL, etc

13. Optional dispensing nozzle, deionized water nozzle, deionized water backwash and nitrogen drying, etching process method, etc

14. Optional SEMI S2&S8, third-party certification